The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Apr. 27, 2006
Applicant:
Young Bog Kim, Gyeonggi-do, KR;
Inventor:
Young Bog Kim, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a semiconductor device having a fin structure includes (a) forming a device isolation film over a silicon substrate to define an active area, (b) etching silicon substrate of gate forming region to form a trench, (c) selectively etching the device isolation film of a trench boundary, (d) forming a gate oxide film over the entire surface of the resulting structure, (e) depositing an electrode material over the entire surface of the resulting structure to form a gate electrode, and (f) forming a gate spacer over a sidewall of the gate electrode.