The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Jul. 12, 2006
Applicant:
Hyo Geun Yoon, Yongin-si, KR;
Inventor:
Hyo Geun Yoon, Yongin-si, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/8232 (2006.01); H01L 21/336 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a semiconductor device having a metal silicide layer comprises forming a structure including a plurality of gate stacks formed on a semiconductor substrate, forming a gate spacer layer formed on an upper surface of the semiconductor substrate and around a sidewall of each gate stack, and forming an insulation layer between the gate stacks. The method further comprises forming a metal silicide layer on an exposed surface of the semiconductor substrate between the gate stacks.