The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Nov. 04, 2005
Ian Michael Watson, Glasgow, GB;
Martin Dawson, Glasgow, GB;
Erdan Gu, Glasgow, GB;
Robert William Martin, Glasgow, GB;
Paul Roger Edwards, Glasgow, GB;
Ian Michael Watson, Glasgow, GB;
Martin Dawson, Glasgow, GB;
Erdan Gu, Glasgow, GB;
Robert William Martin, Glasgow, GB;
Paul Roger Edwards, Glasgow, GB;
University of Strathclyde, Glasgow, GB;
Abstract
A method of growing semiconductor materials in the Indium, Aluminium, Gallium Nitride (InAlGaN) material system and to devices made therefrom, in particular optical devices in the ultraviolet to green region of the visible spectrum. Certain optical devices, for example Vertical Cavity Surface Emitting Lasers (VCSELs) require great precision in the thickness of certain semiconductor layers. One aspect of the present invention provides a gallium-rich group III nitride layer () and an adjacent layer of AlInGaN layer (). The AlInGaN layer () acts as a fabrication facilitation layer and is selected to provide a good lattice match and high refractive index contrast with the gallium-rich group III nitride layer (). The high refractive index contrast permits in-situ optical monitoring. The extra layer () can be used as an etch marker or etch stop layer in subsequent processing and may be used in a lift-off process.