The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Aug. 16, 2006
Yoshiyuki Matsuki, Okayama, JP;
Masaya Mannoh, Hyogo, JP;
Toshiya Fukuhisa, Osaka, JP;
Tsutomu Ukai, Hyogo, JP;
Yoshiyuki Matsuki, Okayama, JP;
Masaya Mannoh, Hyogo, JP;
Toshiya Fukuhisa, Osaka, JP;
Tsutomu Ukai, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor laser device in which a red semiconductor laser device and an infrared semiconductor laser device are located on a single substrate, and an end-face window structure is formed simultaneously. The hydrogen concentration (1.5ecm) of a fourth clad layer () of the infrared semiconductor laser device is higher than the hydrogen concentration (1ecm) of a second clad layer () of the red semiconductor laser device which is a first semiconductor laser device, whereby an active layer of the infrared semiconductor laser device can be sufficiently disordered in the semiconductor laser device.