The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
May. 16, 2006
Hardayal Singh Gill, Palo Alto, CA (US);
Wipul Pemsiri Jayasekara, Los Gatos, CA (US);
Huey-ming Tzeng, San Jose, CA (US);
Xiao Z. Wu, San Jose, CA (US);
Hardayal Singh Gill, Palo Alto, CA (US);
Wipul Pemsiri Jayasekara, Los Gatos, CA (US);
Huey-Ming Tzeng, San Jose, CA (US);
Xiao Z. Wu, San Jose, CA (US);
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
An improved method for the manufacture of magnetoresistive multilayer sensors is disclosed. The method is particularly advantageous for the production of magnetic tunnel junction (MTJ) sensors, which can be damaged at the air bearing surface by conventional lapping and ion milling. The disclosed process protects the ABS of the magnetoresistive sensor by depositing a diamond like carbon layer which remains in place through ion milling. The DLC layer is removed by oxidation subsequent to the formation of the ABS.