The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Mar. 12, 2007
Donald He, Redondo Beach, CA (US);
Daniel M. Kinzer, El Segundo, CA (US);
Donald He, Redondo Beach, CA (US);
Daniel M. Kinzer, El Segundo, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
A Schottky diode is integrated into a planar or trench topology MOSFET having parallel spaced source regions diffused into spaced base stripes. The diffusions forming the source and base stripes are interrupted to permit the drift region to extend to the top of the die and receive a Schottky barrier metal and the source contact. The MOSFET and Schottky share the same drift region, and the pitch between base and source stripes is not changed to receive the Schottky structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile