The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Jun. 02, 2005
Kenichi Ohtsuka, Tokyo, JP;
Yoichiro Tarui, Tokyo, JP;
Yoshinori Matsuno, Tokyo, JP;
Kenichi Kuroda, Tokyo, JP;
Hiroshi Sugimoto, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Yoichiro Tarui, Tokyo, JP;
Yoshinori Matsuno, Tokyo, JP;
Kenichi Kuroda, Tokyo, JP;
Hiroshi Sugimoto, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device includes an anode electrode in Schottky contact with an n-type drift layer formed in an SiC substrate and a JTE region formed outside the anode electrode. The JTE region is made up of a first p-type zone formed in an upper portion of the drift layer under an edge of the anode electrode and a second p-type zone formed outside the first p-type zone having a lower surface impurity concentration than the first p-type zone. The second p-type zone is provided 15 μm or more outwardly away from the edge of the anode electrode. The surface impurity concentration of the first p-type zone ranges from 1.8×10to 4×10cm, and that of the second p-type zone ranges from 1×10to 2.5×10cm.