The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Feb. 16, 2005
Takashi Mimura, Kawasaki, JP;
Takashi Mimura, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A field effect transistor having a gate, a source, and a drain formed from metallic materials is disclosed that is able to supply a high driving current. In the field effect transistor, a source region, a drain region and a gate electrode are formed from silicide or other metallic materials. The metallic materials are selected so that in an n-channel MISFET, the work function Wg of the gate electrode and the work function Wg of the source region satisfy the relation of Wg<Ws, and in a p-channel MISFET, work functions of the gate electrode and the source region satisfy the relation of Wg>Ws.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile