The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Jul. 15, 2004
Applicants:
Takayuki Takeuchi, Ibaraki, JP;
Norishige Nanai, Hirakata, JP;
Inventors:
Takayuki Takeuchi, Ibaraki, JP;
Norishige Nanai, Hirakata, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract
A thin-film transistor () of the present invention comprises a semiconductor layer (), and a source region (), a drain region (), and a gate region () which formed on the semiconductor layer to be separated from each other. Said semiconductor layer is made of composite material, and said composite material comprises organic semiconductive material and at least one kind of inorganic material particles dispersed inside the organic semiconductive material.