The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Dec. 29, 2006
Choon Hwan Kim, Seongnam-si, KR;
Choon Hwan Kim, Seongnam-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A semiconductor substrate is loaded into a reaction chamber to form a tungsten layer. A source gas including tungsten (W) is introduced into the reaction chamber to grow a crystal nucleus of the tungsten on the semiconductor substrate. A reduction gas containing boron (B) is introduced into the reaction chamber to form a tungsten layer on the semiconductor substrate by actions of the source gas and the reduction gas. A hydrogen (H) gas is introduced into the reaction chamber to remove the boron (B) remaining in the tungsten layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile