The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Feb. 23, 2005
Petra V. Rowell, Newbury Park, CA (US);
Miguel E. Urteaga, Moorpark, CA (US);
Richard L. Pierson, Jr., Thousand Oaks, CA (US);
Berinder P. S. Brar, Newbury Park, CA (US);
Petra V. Rowell, Newbury Park, CA (US);
Miguel E. Urteaga, Moorpark, CA (US);
Richard L. Pierson, Jr., Thousand Oaks, CA (US);
Berinder P. S. Brar, Newbury Park, CA (US);
Teledyne Scientific & Imaging, LLC, Thousand Oaks, CA (US);
Abstract
A mask layer is applied to a surface of a semiconductor structure or a seed layer deposited on the surface. The mask layer has a submicron width opening with a high aspect ratio that exposes a portion of the surface or seed layer. Conductive material is conformed to the opening, for example by plating, to form a first contact on the surface or seed layer. The mask and the top layer of the semiconductor structure, except for the portion under the first contact, are removed to expose a second layer of the semiconductor structure. An insulating layer is formed along the sidewalls of the first contact and the top layer of the semiconductor structure beneath the first contact. A mask is then applied to the second layer and a second contact is formed by selectively depositing metal only on the portion of the second layer exposed by the opening.