The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Dec. 28, 2006
Jun-hyeub Sun, Ichon-shi, KR;
Sang-oh Lee, Ichon-shi, KR;
Jun-Hyeub Sun, Ichon-shi, KR;
Sang-Oh Lee, Ichon-shi, KR;
Hynix Semiconductor Inc., Ichon-shi, KR;
Abstract
A method for fabricating a capacitor in a semiconductor device includes forming a stack structure providing a plurality of open regions, the stack structure including an insulation layer and a hard mask pattern, forming a conductive layer over the stack structure and in the open regions, etching a portion of the conductive layer formed outside the open regions to form bottom electrodes in the open regions, removing the hard mask pattern, and etching upper portions of the bottom electrodes that are exposed after the hard mask pattern is removed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile