The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
May. 13, 2008
Torkel Arnborg, Stockholm, SE;
Ulf Smith, Huddinge, SE;
Torkel Arnborg, Stockholm, SE;
Ulf Smith, Huddinge, SE;
Infineon Technologies AG, Munich, DE;
Abstract
An LDMOS transistor device in an integrated circuit comprises a semiconductor substrate (), a gate region () including a gate semiconductor layer region () on top of a gate insulation layer region (), source () and drain () regions, and a channel () arranged beneath the LDMOS gate region, the channel interconnecting the LDMOS source and drain regions and having a laterally graded doping concentration. In order to obtain a lower parasitic capacitance coupling from the gate semiconductor region, the gate semiconductor layer region is provided with a laterally graded net doping concentration (P+N+; N+N−). A method for fabrication of the inventive LDMOS transistor device is further disclosed.