The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Nov. 08, 2005
Young Bog Kim, Icheon-shi, KR;
Jun Soo Chang, Icheon-shi, KR;
Min Yong Lee, Seoul, KR;
Yong Seok Eun, Seongnam-si, KR;
Young Bog Kim, Icheon-shi, KR;
Jun Soo Chang, Icheon-shi, KR;
Min Yong Lee, Seoul, KR;
Yong Seok Eun, Seongnam-si, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
Disclosed herein is a method for forming a gate structure of a semiconductor device. The method comprises forming a plurality of gates including a first gate dielectric film, a first gate conductive film, and a gate silicide film sequentially stacked on a silicon substrate having a field oxide film, forming a thermal oxide film on a side of the first gate conductive film, etching the silicon substrate exposed between the plurality of gates to a predetermined depth to form a plurality of trenches, forming a second gate oxide film on the interior wall of the trenches, and forming a second gate conductive film in a spacer shape on a predetermined region of the second gate oxide film, and on a side of the first gate conductive film, the gate silicide film, and the thermal oxide film.