The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Dec. 13, 2007
Applicants:
Choul Joo Ko, Seongnam-si, KR;
Yong Jun Lee, Seoul, KR;
Inventors:
Choul Joo Ko, Seongnam-si, KR;
Yong Jun Lee, Seoul, KR;
Assignee:
Dongbu HiTek Co., Ltd., Seoul, KR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/8244 (2006.01); H01L 21/8242 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a method for forming a semiconductor device, a device isolation layer is formed in a capacitor region of a silicon substrate, and a bottom electrode and a dielectric layer are formed on the device isolation layer. Insulation sidewalls are formed on both sides of the bottom electrode. A top electrode is formed on the dielectric layer, and simultaneously a gate electrode is formed in a transistor region of the silicon substrate. Source/drain impurity regions are formed in the silicon substrate at both sides of the gate electrode.