The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Aug. 15, 2007
Kimiya Ikushima, Hirakata, JP;
Hiroyoshi Komobuchi, Kyoto, JP;
Asako Baba, Tokyo, JP;
Mikiya Uchida, Kyoto, JP;
Kimiya Ikushima, Hirakata, JP;
Hiroyoshi Komobuchi, Kyoto, JP;
Asako Baba, Tokyo, JP;
Mikiya Uchida, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
In the present invention, an etching holeis formed in a polysilicon filmas a cavity-wall member. Through the etching hole, hydrofluoric acid is injected, so as to dissolve a silicon oxide film, thereby forming a cavity. In the cavity, a detecting unitof a sensor is in an exposed condition. Next, by sputtering, an Al filmis deposited in the etching holeand on an upper face of a substrate. Thereafter, a portion of the Al filmpositioned on the polysilicon filmis removed by etching back, thereby leaving only a metal closureof Al which closes the etching hole. The sputtering step is performed under a pressure of 5 Pa or less, so that the pressure in the cavity can be held to be low.