The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Dec. 23, 2004
Ashesh Parikh, Frisco, TX (US);
Jarvis Jacobs, Murphy, TX (US);
Ashesh Parikh, Frisco, TX (US);
Jarvis Jacobs, Murphy, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method () for generating an optical proximity correction model for a mask layout having an asymmetric feature structure includes fabricating a mask () having a plurality of symmetric and asymmetric test structures thereon, and image processing one or more semiconductor wafers () using the fabricated mask to create a plurality of symmetric and asymmetric resist structures overlying the one or more wafers. At least one critical dimension of the symmetric resist structures and the asymmetric resist structures are measured (), thereby generating symmetric and asymmetric critical dimension data, and a difference between a desired feature size of the symmetric and asymmetric structures and the measured feature size of the symmetric and asymmetric structures is evaluated () in order to generate an optical proximity correction model () based thereon.