The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2009

Filed:

Oct. 09, 2007
Applicants:

Yasuhiro Fujimoto, Okayama, JP;

Toru Takayama, Nara, JP;

Isao Kidoguchi, Hyogo, JP;

Inventors:

Yasuhiro Fujimoto, Okayama, JP;

Toru Takayama, Nara, JP;

Isao Kidoguchi, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor laser device includes a first cavity and a second cavity formed apart from each other over a semiconductor substrate. The first cavity includes a first buffer layer and a first semiconductor layer including a first active layer, and the second cavity includes a second buffer layer and a second semiconductor layer including a second active layer. A window structure is provided in a region near an end face of each of the first semiconductor layer and the second semiconductor layer. A band gap of the first buffer layer is greater than that of the first active layer, and a band gap of the second buffer layer is greater than that of the second active layer.


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