The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2009

Filed:

Dec. 10, 2007
Applicants:

Hiroyasu Nagai, Osaka, JP;

Masayoshi Nakayama, Shiga, JP;

Inventors:

Hiroyasu Nagai, Osaka, JP;

Masayoshi Nakayama, Shiga, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In order to determine data stored in a memory cell of a resistive cross-point cell array, two reference cells having two different known resistance values (e.g., data '0' and data '1') are provided, and a difference in current between a selected cell and the reference cell having data “0” and a difference in current between the selected cell and the reference cell having data “1” are compared. By comparison with a current of the reference cell which has a parasitic current as with the selected cell and has known data “0”/“1”, data can be determined while suppressing an influence of a parasitic current.


Find Patent Forward Citations

Nagai, Hiroyasu. (2009). Non-volatile semiconductor memory device (U.S. Patent No. 7561461). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7561461

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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