The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2009

Filed:

May. 03, 2007
Applicants:

Takeshi Yuzawa, Chino, JP;

Hideki Yuzawa, Iida, JP;

Michiyoshi Takano, Okaya, JP;

Inventors:

Takeshi Yuzawa, Chino, JP;

Hideki Yuzawa, Iida, JP;

Michiyoshi Takano, Okaya, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device including: a semiconductor section in which an element is formed; an insulating layer formed on the semiconductor section; an electrode pad formed on the insulating layer; a contact section formed of a conductive material provided in a contact hole in the insulating layer and electrically connected with the electrode pad; a passivation film formed to have an opening on a first section of the electrode pad and to be positioned on a second section of the electrode pad; a bump formed to be larger than the opening in the passivation film and to be partially positioned on the passivation film; and a barrier layer which lies between the electrode pad and the bump. The contact section is connected with the second section at a position within a range in which the contact section overlaps the bump while avoiding the first section of the electrode pad.


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