The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Feb. 28, 2007
Jae-hee Cho, Yongin-si, KR;
Martin Schubert, Troy, NY (US);
E. Fred Schubert, Troy, NY (US);
Jong-kyu Kim, Troy, NY (US);
Cheol-soo Sone, Yongin-si, KR;
Jae-hee Cho, Yongin-si, KR;
Martin Schubert, Troy, NY (US);
E. Fred Schubert, Troy, NY (US);
Jong-kyu Kim, Troy, NY (US);
Cheol-soo Sone, Yongin-si, KR;
Samsung Electro-Mechanics Co., Ltd., Gyeonggi-do, KR;
Rensselaer Polytechnic Institute, Troy, NY (US);
Abstract
In a light emitting diode, a first semiconductor layer supplies electrons, and a second semiconductor layer supplies holes. An active layer is formed between the first and second semiconductor layers. The active layer receives electrons and holes, and emits light in response to coupling between the electrons and the holes. A first reflective layer is formed on a bottom portion of the first semiconductor layer, and a second reflective layer is formed on a top portion of the second semiconductor layer. The light emitted from the active layer exits toward a side of the active layer.