The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Feb. 23, 2006
Youichi Nagai, Osaka, JP;
Koji Katayama, Itami, JP;
Hiroyuki Kitabayashi, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A light-emitting device is presented which includes a GaN substratean n-type nitride semiconductor substrate layer (n-type AlGaN layer) disposed on a first main surface side of the GaN substratea p-type nitride semiconductor substrate layer (p-type AlGaN layer) disposed further away from the GaN substratecompared to the n-type nitride semiconductor substrate layer; and a light-emitting layer (multi-quantum well (MQW)) positioned between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The p-type nitride semiconductor layer side is down-mounted. Also, light is released from a second main surface, which the main surface opposite from the first main surface of the GaN substrateA grooveis formed on the second main surface of the GaN substrateThe inner perimeter surface of the grooveincludes a section (curved surface section) on which surface treatment is performed to smooth the inner perimeter surface.