The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Apr. 25, 2006
Shih-yen Lin, Hsinchu, TW;
Tzu-min Ou, Taipei, TW;
Chuan-yi Yang, Chiayi County, TW;
Shu-ting Chou, Taipei County, TW;
Chun-yuan Huang, Changhua County, TW;
I-min Chan, Taoyuan County, TW;
Shiau-shin Cheng, Pingtung County, TW;
Yi-jen Chan, Taoyuan County, TW;
Shih-Yen Lin, Hsinchu, TW;
Tzu-Min Ou, Taipei, TW;
Chuan-Yi Yang, Chiayi County, TW;
Shu-Ting Chou, Taipei County, TW;
Chun-Yuan Huang, Changhua County, TW;
I-Min Chan, Taoyuan County, TW;
Shiau-Shin Cheng, Pingtung County, TW;
Yi-Jen Chan, Taoyuan County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A vertical organic transistor is disclosed, which includes at least: a collector contact layer disposed on a substrate; a first organic semiconductor layer disposed on the collector contact layer; a base contact layer disposed on the first organic semiconductor layer, wherein the base contact layer comprises no less than two layers of hetero-metal layers or hetero-conductive organic layers; a second organic semiconductor layer disposed on the base contact layer; and an emitter contact layer disposed on the second organic semiconductor layer. Device properties such as output current and I/Irate can be improved by using the vertical organic transistor of this invention.