The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Sep. 15, 2006
Applicant:
Gerald Beyer, Leuven, BE;
Inventor:
Gerald Beyer, Leuven, BE;
Assignee:
Interuniversitair Microelektronica Centrum, Leuven, BE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/336 (2006.01); H01L 21/76 (2006.01); H01L 29/76 (2006.01); H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for producing narrow trenches in semiconductor devices. The narrow trenches are formed by chemically changing the properties of a first dielectric layer locally, such that the side walls of a patterned hole in the first dielectric layer is converted locally and becomes etchable by a first etching substance. Subsequently a second dielectric material is deposited in the patterned structure and the damaged part of the first dielectric material is removed such that small trenches are obtained.