The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Dec. 06, 2006
Applicants:
Whee Won Cho, Cheongju-si, KR;
Seung Hee Hong, Seoul, KR;
Seong Hwan Myung, Yeoju-gun, KR;
Eun Soo Kim, Incheon, KR;
Inventors:
Whee Won Cho, Cheongju-si, KR;
Seung Hee Hong, Seoul, KR;
Seong Hwan Myung, Yeoju-gun, KR;
Eun Soo Kim, Incheon, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing flash memory devices increases a coupling ratio by increasing the height of a floating gate externally projecting from an isolation layer. A portion of the isolation layer between the floating gates is etched so that a control gate to be formed subsequently is located between the floating gates. Accordingly, an interference phenomenon can be reduced.