The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Feb. 14, 2006
Hyun-su Kim, Gyeonggi-Do, KR;
Jong-ho Yun, Gyeonggi-Do, KR;
Sang-woo Lee, Seoul, KR;
Seok-woo Jung, Gyeonggi-Do, KR;
Eun-ji Jung, Gyeonggi-Do, KR;
Hyun-Su Kim, Gyeonggi-Do, KR;
Jong-Ho Yun, Gyeonggi-Do, KR;
Sang-Woo Lee, Seoul, KR;
Seok-Woo Jung, Gyeonggi-Do, KR;
Eun-Ji Jung, Gyeonggi-Do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A gate is silicided through its sides while limiting silicidation through the top of the gate. A blocking layer may be formed over the gate layer, and the sidewalls of the gate layer are exposed. A layer of metal is formed on the sidewalls of the gate and thermally treated to silicide the gate layer. The sidewalls of the gate maybe exposed through an etching process in which a silicide layer formed over the blocking layer is used as an etch mask.