The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Sep. 10, 2004
John W. Krawczyk, Richmond, KY (US);
Andrew L. Mcnees, Lexington, KY (US);
James M. Mrvos, Lexington, KY (US);
John W. Krawczyk, Richmond, KY (US);
Andrew L. McNees, Lexington, KY (US);
James M. Mrvos, Lexington, KY (US);
Lexmark International, Inc., Lexington, KY (US);
Abstract
A method of substantially simultaneously forming at least two fluid supply slots through a thickness of semiconductor substrate from a first surface to a second surface thereof. The method includes the steps of applying a photoresist layer to the first surface of the semiconductor substrate. The photoresist layer is patterned and developed using a gray scale mask for a first fluid supply slot. The semiconductor substrate is then reactive ion etched, to form the at least two fluid supply slots through the thickness of the substrate. The first fluid supply slot is substantially wider than the second fluid supply slot, and the first and second fluid supply slots are etched through the substrate at substantially the same rate.