The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Feb. 13, 2006
Applicant:
Hyon-jong Cho, Gumi-si, KR;
Inventor:
Hyon-Jong Cho, Gumi-si, KR;
Assignee:
Siltron Inc., , KR;
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to a technique for producing a high quality Si single crystal ingot with a high productivity by the Czochralski method. The technique of the invention can control the magnetic field strength of an oxygen dissolution region different from that of a solid-liquid interface region in order to control the oxygen concentration at a desired value.