The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2009

Filed:

May. 23, 2005
Applicants:

Masanori Watanabe, Nara, JP;

Shinichi Kawato, Kashiwara, JP;

Mitsuhiro Matsumoto, Kashihara, JP;

Inventors:

Masanori Watanabe, Nara, JP;

Shinichi Kawato, Kashiwara, JP;

Mitsuhiro Matsumoto, Kashihara, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a semiconductor laser device of the invention, a ridge portionforms a waveguide, and guided light goes along the ridge portion. A tail of the guided layer is present also at first side portions, while second side portionsare regions which the tail of the guided light does not reach. Meanwhile, scattered light generated from the ridge portiongoes through the first side portions, spreading into the second side portions. In the second side portions, a light absorption layerserving as a light absorber is formed on the first upper clad layer, where the scattered light is absorbed. As a result of the absorption of scattered light in the second side portions, ripples of radiation light are reduced. Also since the light absorption layeris in electrical contact with a p-side ohmic electrode, the problem of charge accumulation to the light absorption layercan be avoided.


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