The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Jan. 08, 2007
Ki-seog Youn, Suwon-si, KR;
Jong-hyon Ahn, Suwon-si, KR;
Kwan-jong Roh, Gunpo-si, KR;
Hye-kyoung Lee, Seongnam-si, KR;
Ki-seog Youn, Suwon-si, KR;
Jong-hyon Ahn, Suwon-si, KR;
Kwan-jong Roh, Gunpo-si, KR;
Hye-kyoung Lee, Seongnam-si, KR;
Samsung Electroncis Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device and related method of manufacture are disclosed. The device comprises; a trench having a corner portion formed in the semiconductor substrate, a first oxide film formed on an inner wall of the trench and having an upper end portion exposing the corner portion of the semiconductor substrate, a nitride liner formed on the first oxide film, a second oxide film formed in contact with the upper end of the first oxide film and on the exposed corner portion and an upper surface of the semiconductor substrate, a field insulating film formed on the nitride liner to substantially fill the trench, and a field protecting film formed in contact with the second oxide film and filling a trench edge recess formed between the field insulating film and the second oxide film.