The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Jun. 20, 2006
Applicants:
Ken Suzuki, Osaka, JP;
Masafumi Tsutsui, Shiga, JP;
Inventors:
Ken Suzuki, Osaka, JP;
Masafumi Tsutsui, Shiga, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a semiconductor device having a first MIS transistor on a semiconductor substrate, the first MIS transistor includes a p-type semiconductor layer, a first gate insulating film, a first gate electrode, a first sidewall insulating film including at least a first sidewall, an n-type extension diffusion layer, and an n-type impurity diffusion layer. The first sidewall is not formed at the side faces of the first gate electrode on the p-type semiconductor layer. An insulating film having tensile stress is formed on the semiconductor substrate so as to cover the first MIS transistor.