The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Apr. 05, 2006
Takashi Noguchi, Seongnam-si, KR;
Hans S. Cho, Seoul, KR;
Wenxu Xianyu, Yongin-si, KR;
Huaxiang Yin, Yongin-si, KR;
Xiaoxin Zhang, Yongin-si, KR;
Takashi Noguchi, Seongnam-si, KR;
Hans S. Cho, Seoul, KR;
Wenxu Xianyu, Yongin-si, KR;
Huaxiang Yin, Yongin-si, KR;
Xiaoxin Zhang, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Semiconductor-on-insulator (SOI) structures, semiconductor devices using the same and methods of manufacturing the same, and more particularly, to a structure with a single-crystalline (for example, germanium (x-Ge)) layer on an insulating layer, semiconductor devices using the same, and methods of manufacturing the same. The SOI structure may include a single-crystalline substrate formed of a first semiconductor material, a first insulating layer formed on the substrate and having at least one window exposing a portion of the substrate, a first epitaxial growth region formed on a surface of the substrate exposed by the window and formed of at least one of the first semiconductor material and a second semiconductor material, and a first single-crystalline layer formed on the first insulating layer and the first epitaxial growth region and formed of the second semiconductor material, and crystallized using a surface of the first epitaxial growth region as a seed layer for crystallization.