The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Feb. 02, 2007
Osamu Wada, Yokohama, JP;
Hiroaki Nakano, Yokohama, JP;
Hiroshi Ito, Yokohama, JP;
Toshimasa Namekawa, Tokyo, JP;
Atsushi Nakayama, Yokohama, JP;
Osamu Wada, Yokohama, JP;
Hiroaki Nakano, Yokohama, JP;
Hiroshi Ito, Yokohama, JP;
Toshimasa Namekawa, Tokyo, JP;
Atsushi Nakayama, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device has a MOS capacitor in which a drain region and a source region of a MOS structure are commonly connected, and a capacitance is formed between the commonly connected drain region/source region and a gate electrode of the MOS structure; and a wiring capacitor which has a first comb-shaped wiring that is formed on said MOS capacitor through an interlayer insulating film, is connected to the gate electrode of said MOS capacitor, and has projecting portions projecting like comb teeth and a second comb-shaped wiring that is formed on said MOS capacitor through the interlayer insulating film, is arranged across an inter-line insulating film from the first comb-shaped wiring, is connected to the drain region and source region, and has projecting portions projecting like comb teeth, wherein the projecting portions of the second comb-shaped wiring are arranged alternately with the projecting portions of the first comb-shaped wiring and arranged perpendicularly to a channel direction connecting the drain region and source region of said MOS capacitor.