The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Sep. 23, 2005
Se-jin Chung, Yongin-si, KR;
Chi-woo Kim, Seoul, KR;
Ui-jin Chung, Suwon-si, KR;
Dong-byum Kim, Seoul, KR;
Se-Jin Chung, Yongin-si, KR;
Chi-Woo Kim, Seoul, KR;
Ui-Jin Chung, Suwon-si, KR;
Dong-Byum Kim, Seoul, KR;
Samsung Electroncis Co., Ltd., Gyeonggi-do, KR;
Abstract
In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.