The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Dec. 27, 2006
Applicants:
Eun Soo Kim, Incheon, KR;
Seung Hee Hong, Seoul, KR;
Cheol MO Jeong, Kyeongki-do, KR;
Jung Geun Kim, Seoul, KR;
Inventors:
Eun Soo Kim, Incheon, KR;
Seung Hee Hong, Seoul, KR;
Cheol Mo Jeong, Kyeongki-do, KR;
Jung Geun Kim, Seoul, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a metal line of a semiconductor memory device includes the steps of forming plugs of a damascene structure in a first interlayer insulating layer over a semiconductor substrate, forming a barrier metal layer, a metal layer and an anti-reflection layer on the resulting surface, etching the anti-reflection layer, the metal layer, and the barrier metal layer according a specific pattern, and forming an insulating layer on sidewalls of the metal layer.