The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2009

Filed:

Dec. 29, 2005
Applicants:

Hyuk Park, Choongcheongbuk-do, KR;

Dong Yeol Keum, Icheon, KR;

Inventors:

Hyuk Park, Choongcheongbuk-do, KR;

Dong Yeol Keum, Icheon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a semiconductor device including forming a dummy gate electrode which is divided into first and second areas, selectively implanting N-type ions and P-type ions into the first and second areas of the dummy gate electrode respectively and then implanting impurity ions into a boundary region between the first area and second area of the dummy gate electrode.


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