The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Jul. 09, 2007
Kei Yamamoto, Yamatokooriyama, JP;
Junichi Nakamura, Higashihiroshima, JP;
Kei Yamamoto, Yamatokooriyama, JP;
Junichi Nakamura, Higashihiroshima, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
There are provided preflow periods t, tin which group III element materials TMG, TMA and TMI are not supplied from a group III element material container to a reaction region (reactor), while a group V element material PHand an Mg dopant material are supplied from a group V element material container and a dopant material container to the reaction region (reactor) after an Mg-undoped group III-V compound semiconductor layer is crystallinically grown and before an Mg-doped group III-V compound semiconductor layer is crystallinically grown. According to the semiconductor manufacturing method, an Mg doping profile can be accurately controlled.