The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Aug. 10, 2006
Volker Harle, Laaber, DE;
Berthold Hahn, Hemau, DE;
Hans-jurgen Lugauer, Sinzing, DE;
Helmut Bolay, Pettendorf, DE;
Stefan Bader, Eilsbrunn, DE;
Dominik Eisert, Regensburg, DE;
Uwe Strauss, Bad Abbach, DE;
Johannes Volkl, Erlangen, DE;
Ulrich Zehnder, Regensburg, DE;
Alfred Lell, Maxhutte-Haidhof, DE;
Andreas Weimar, Regensburg, DE;
Volker Harle, Laaber, DE;
Berthold Hahn, Hemau, DE;
Hans-Jurgen Lugauer, Sinzing, DE;
Helmut Bolay, Pettendorf, DE;
Stefan Bader, Eilsbrunn, DE;
Dominik Eisert, Regensburg, DE;
Uwe Strauss, Bad Abbach, DE;
Johannes Volkl, Erlangen, DE;
Ulrich Zehnder, Regensburg, DE;
Alfred Lell, Maxhutte-Haidhof, DE;
Andreas Weimar, Regensburg, DE;
Osram Opto Semiconductors GmbH, Regensburg, unknown;
Abstract
An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers () of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers () of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (), for which the essentially non-radiating well layers () and the barrier layers () arranged in front form a superlattice.