The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Mar. 30, 2005
Kimihiro Okada, Tokyo, JP;
Masahide Iwakata, Tokyo, JP;
Takashi Haraguchi, Tokyo, JP;
Mikio Takagi, Tokyo, JP;
Yuichi Fukushima, Tokyo, JP;
Hiroki Yoshikawa, Joetsu, JP;
Toshinobu Ishihara, Joetsu, JP;
Satoshi Okazaki, Joetsu, JP;
Yukio Inazuki, Joetsu, JP;
Tadashi Saga, Tokyo, JP;
Kimihiro Okada, Tokyo, JP;
Masahide Iwakata, Tokyo, JP;
Takashi Haraguchi, Tokyo, JP;
Mikio Takagi, Tokyo, JP;
Yuichi Fukushima, Tokyo, JP;
Hiroki Yoshikawa, Joetsu, JP;
Toshinobu Ishihara, Joetsu, JP;
Satoshi Okazaki, Joetsu, JP;
Yukio Inazuki, Joetsu, JP;
Tadashi Saga, Tokyo, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Toppan Printing Co., Ltd., Tokyo, JP;
Abstract
In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.