The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Nov. 30, 2005
Emmett M. Howard, Gilbert, AZ (US);
Kenneth A. Dean, Phoenix, AZ (US);
Dirk C. Jordan, Gilbert, AZ (US);
Emmett M. Howard, Gilbert, AZ (US);
Kenneth A. Dean, Phoenix, AZ (US);
Dirk C. Jordan, Gilbert, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method is provided for preventing electron emission from a sidewall () of a gate electrode () and the edge () of the gate electrode stack of a field emission device (), the gate electrode () having a surface () distally disposed from an anode () and a side () proximate to emission electrodes (). The method comprises growing dielectric material () over the surface () and side () of the gate electrode (), and performing an anisotropic etch () normal to the surface () to remove the dielectric material () from the surface () and leaving at least a portion of the dielectric material () on the side () of the gate electrode () and edge () of the gate electrode stack.