The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2009

Filed:

Apr. 11, 2007
Applicants:

Rashmi Bahuguna, Ames, IA (US);

Mani Mina, Ames, IA (US);

Robert J. Weber, Boone, IA (US);

Inventors:

Rashmi Bahuguna, Ames, IA (US);

Mani Mina, Ames, IA (US);

Robert J. Weber, Boone, IA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A fiber optic switch based on the magneto-optic effect of magnetic materials is presented. Due to the optical fiber based construction of the switching device it is suitable for optical fiber networks The on-off function of the switch is useful for isolation and connection of node(s) from a fiber optical network without having to turn off a laser. The switch is based on the Faraday Effect exhibited by magneto-optic materials. The all-fiber magneto-optic switch has a beam splitter at the input that splits an incoming signal into orthogonal polarized paths. Each path has at least one magneto-optic Faraday rotator (MOFR) controlled by a field. When the field is present, the polarization of the optical beam changes, thereby turning the switch on or off depending on the initial polarization of the beam. A beam coupler couples the orthogonal polarized paths at the output of the all-fiber magneto-optic switch. The MOFR is a bismuth substituted iron garnet. In an alternate embodiment the switch is constructed in the Mach-Zehnder configuration, utilizing two 3 dB couplers, isolators and MOFRs. In an alternate embodiment the switch is fabricated on silicon-on-insulator.


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