The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2009

Filed:

Jun. 13, 2006
Applicant:

Ki-seok Cho, Chungcheongbuk-do, KR;

Inventor:

Ki-Seok Cho, Chungcheongbuk-do, KR;

Assignee:

MagnaChip Semiconductor, Ltd., Chungcheongbuk-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

The EEPROM cell includes a writing unit having a flash cell Metal Oxide Semiconductor (MOS) for receiving from outside a gate selection signal via a gate and a drain selection signal via a drain, and writing one bit data, and a high-voltage MOS whose source is connected to a source of the flash cell MOS to have a symmetrical structure and for receiving the gate selection signal via a gate, and a sensing unit having a first sensing MOS whose source is connected to a power supply voltage, gate to a drain of a second sensing MOS and drain to the drain of the flash cell MOS, and the second sensing MOS whose source is connected to the power supply voltage, gate to the drain of the first sensing MOS and drain to the drain of the high-voltage MOS.


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