The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7554255 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 30, 2009

Filed:

Jul. 30, 2003
Applicants:

Kun-hong Lee, Kyungsangbuk-do, KR;

Sun-kyu Hwang, Kyungsangbuk-do, KR;

Soo-hwan Jeong, Kyungsangbuk-do, KR;

Inventors:

Kun-Hong Lee, Kyungsangbuk-do, KR;

Sun-Kyu Hwang, Kyungsangbuk-do, KR;

Soo-Hwan Jeong, Kyungsangbuk-do, KR;

Assignee:

Postech Foundation, Kyungsangbuk-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 1/62 (2006.01); H01J 63/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electric field emission device having a triode structure is fabricated by using an anodic oxidation process. The device includes a supporting substrate, a bottom electrode layer to be used as an cathode electrode of the device, a gate insulating layer having a plurality of first sub-micro holes, a gate electrode layer having a plurality of second sub-micro holes connecting to the first sub-micro holes, an anode insulating layer having a plurality of third sub-micro holes connecting to the second sub-micro holes, a top electrode layer for hermetically sealing the device, the top electrode layer being used as an anode of the device and a plurality of emitters formed in the first sub-micro holes. The emitters are formed so as to come into as close contact as possible to the electrodes of the device, which results in decreasing a driving voltage.


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