The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Mar. 24, 2005
Hiroshi Naito, Kokubu, JP;
Hiroshi Naito, Kokubu, JP;
Yamaha Corporation, Shizuoka-ken, JP;
Abstract
A plurality of IC regions are formed on a semiconductor wafer, which is cut into individual chips incorporating ICs, wherein wiring layers and insulating layers are sequentially formed on a silicon substrate. In order to reduce height differences between ICs and scribing lines, a planar insulating layer is formed to cover the overall surface with respect to ICs, seal rings, and scribing lines. In order to avoid occurrence of breaks and failures in ICs, openings are formed to partially etch insulating layers in a step-like manner so that walls thereof are each slanted by prescribed angles ranging from 20° to 80°. For example, a first opening is formed with respect to a thin-film element section, and a second opening is formed with respect to an external-terminal connection pad.