The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Jan. 24, 2006
Young-dae Seo, Seoul, KR;
Bong-gil Yang, Suwon-si, KR;
Young-Dae Seo, Seoul, KR;
Bong-Gil Yang, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
Disclosed are a bipolar transistor comprising an emitter terminal and a base terminal having substantially equal heights, and a method of fabricating the same. The bipolar transistor comprises a silicon-germanium layer acting as a base and formed on a semiconductor layer acting as a collector. The bipolar transistor further comprises an insulating layer having contact windows for an emitter terminal and a collector terminal. The emitter and collector terminals are formed by forming a polysilicon layer filling the contact windows and performing a planarization process on the polysilicon layer. An ion implantation process is performed to form a polysilicon emitter terminal and a polysilicon base terminal.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile