The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Apr. 11, 2005
Akira Inoue, Osaka, JP;
Haruyuki Sorada, Osaka, JP;
Yoshio Kawashima, Osaka, JP;
Takeshi Takagi, Kyoto, JP;
Akira Inoue, Osaka, JP;
Haruyuki Sorada, Osaka, JP;
Yoshio Kawashima, Osaka, JP;
Takeshi Takagi, Kyoto, JP;
Panasonic Corporation, Kadoma, JP;
Abstract
A production method for a semiconductor device according to the present invention includes: step (A) of providing a substrate including a semiconductor layer having a principal face, the substrate having a device isolation structure (STI) formed in an isolation regionfor partitioning the principal face into a plurality of device active regions; step (B) of growing an epitaxial layer containing Si and Ge on selected device active regionsamong the plurality of device active regionsof the principal face of the semiconductor layer; and step (C) of forming a transistor in, among the plurality of device active regions, each of the device active regionson which the epitaxial layer is formed and each of the device active regions Aon which the epitaxial layer is not formed. Step (A) includes step (a1) of forming, in the isolation region, a plurality of dummy regionssurrounded by the device isolation structure (STI), and step (B) includes step (b1) of growing a layer of the same material as that of the epitaxial layer on selected regions among the plurality of dummy regions