The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Sep. 20, 2006
Masayoshi Kosaki, Aichi-ken, JP;
Koji Hirata, Aichi-ken, JP;
Masayoshi Kosaki, Aichi-ken, JP;
Koji Hirata, Aichi-ken, JP;
Toyoda Gosei, Co., Ltd., Nishikasugai-gun, Aichi, JP;
Abstract
An electronic device includes a substrate; a single-crystalline first buffer layer, disposed on the substrate, containing a semiconductor represented by the formula AlGaN; a non-single-crystalline second buffer layer, disposed on the first buffer layer, containing a semiconductor represented by the formula AlGaN; and an undoped base layer, disposed on the second buffer layer, containing GaN, wherein 0<×≦1 and 0≦y≦1. The first buffer layer is formed at a temperature of 1000° C. to 1200° C. The second buffer layer is formed at a temperature of 350° C. to 800° C. The substrate contains SiC. The second buffer layer has a thickness of 5 to 20 nm.