The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Aug. 13, 2004
Akira Tanaka, Yokohama, JP;
Masaaki Onomura, Tokyo, JP;
Akira Tanaka, Yokohama, JP;
Masaaki Onomura, Tokyo, JP;
Kabushiki Kaisha Toshiba, Minato-Ku, Tokyo, JP;
Abstract
Disclosed is a semiconductor light-emitting element, comprising an n-type cladding layer; a light guide layer positioned on the n-type cladding layer; a multiple quantum well structure active layer positioned on the light guide layer; a p-type carrier overflow prevention layer positioned on the active layer and having an impurity concentration of 5×10cmto not more than 3×10cm; a p-type light guide layer positioned on the p-type carrier overflow prevention layer and having an impurity concentration of 1×10cmor more and less than that of the p-type carrier overflow prevention layer; and a p-type cladding layer positioned on the p-type light guide layer and having a band gap narrower than the p-type carrier overflow prevention layer, and a method of manufacturing the same.