The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
May. 09, 2005
Chang-soo Kim, Suwon-si, KR;
Tae-wook Kang, Seongnam-si, KR;
Chang-yong Jeong, Suwon-si, KR;
Jae-young OH, Suwon-si, KR;
Sang-il Park, Seoul, KR;
Seong-moh Seo, Suwon-si, KR;
Chang-Soo Kim, Suwon-si, KR;
Tae-Wook Kang, Seongnam-si, KR;
Chang-Yong Jeong, Suwon-si, KR;
Jae-Young Oh, Suwon-si, KR;
Sang-Il Park, Seoul, KR;
Seong-Moh Seo, Suwon-si, KR;
Samsung Mobile Display Co., Ltd., Suwon, KR;
Abstract
A TFT having a dual buffer structure, a method of fabricating the same, and a flat panel display having the TFT, and a method of fabricating the same are provided. The TFT includes a first buffer layer formed of an amorphous silicon layer on a substrate, a second buffer layer formed on the first buffer layer. The TFT also includes a semiconductor layer formed on the second buffer layer and a gate electrode formed on the semiconductor layer. The dual buffer structure provides better barrier to impurities diffusing from the substrate, and also acts as a black matrix to reduce unwanted reflections and is a source of hydrogen to passivate other layers.