The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Feb. 07, 2008
Toshio Nomaguchi, Yokohama, JP;
Toshio Nomaguchi, Yokohama, JP;
Sumitomo Electric Industries Ltd., Osaka, JP;
Abstract
In a method of fabricating a semiconductor optical device, insulating structures for an alignment mark for use in electron beam exposure are formed on a primary surface of a first group III-V semiconductor region. After forming the insulating structures, a second group III-V semiconductor region is grown on the first group III-V semiconductor region to form an epitaxial wafer. The height of the insulating structures is larger than thickness of the second group III-V semiconductor region. After forming the second group III-V semiconductor region, alignment for the electron beam exposure is performed. After the alignment, a resist is exposed to an electron beam to form a resist mask. The resist mask has a pattern for a diffraction grating, and the resist is on the epitaxial wafer.